IXFN32N100P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 59.17 EUR |
| 10+ | 52.73 EUR |
| 100+ | 46.28 EUR |
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Technische Details IXFN32N100P Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V.
Weitere Produktangebote IXFN32N100P nach Preis ab 47.33 EUR bis 60.81 EUR
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IXFN32N100P | Hersteller : IXYS |
Discrete Semiconductor Modules 32 Amps 1000V 0.32 Rds |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN32N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
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IXFN32N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 27A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN32N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 27A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 75A Power dissipation: 690W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 225nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN32N100P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 27A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.32Ω Pulsed drain current: 75A Power dissipation: 690W Technology: HiPerFET™; Polar™ Kind of channel: enhanced Gate charge: 225nC Reverse recovery time: 300ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |