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IXFN220N20X3

IXFN220N20X3 IXYS


IXFN220N20X3.pdf 200VProductBrief.pdf Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+36.65 EUR
30+ 35.25 EUR
Mindestbestellmenge: 2
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Technische Details IXFN220N20X3 IXYS

Description: MOSFET N-CH 200V 160A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.

Weitere Produktangebote IXFN220N20X3 nach Preis ab 36.65 EUR bis 42.8 EUR

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IXFN220N20X3 IXFN220N20X3 Hersteller : IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Case: SOT227B
On-state resistance: 6.2mΩ
Power dissipation: 390W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Gate charge: 204nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 500A
Semiconductor structure: single transistor
Reverse recovery time: 128ns
Drain-source voltage: 200V
Drain current: 160A
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+36.65 EUR
Mindestbestellmenge: 2
IXFN220N20X3 IXFN220N20X3 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn220n20x3_datasheet.pdf.pdf Description: MOSFET N-CH 200V 160A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.13 EUR
10+ 38.43 EUR
IXFN220N20X3 IXFN220N20X3 Hersteller : IXYS media-3321700.pdf MOSFETs MSFT N-CH ULTRA JNCT X3 MINI
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+42.8 EUR
IXFN220N20X3 IXFN220N20X3 Hersteller : Littelfuse fets_n-channel_ultra_junction_ixfn220n20x3_datasheet.pdf.pdf Trans MOSFET N-CH 200V 160A 4-Pin SOT-227B
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