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IXFN120N65X2

IXFN120N65X2 IXYS


IXFN120N65X2.pdf Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
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Technische Details IXFN120N65X2 IXYS

Description: MOSFET N-CH 650V 108A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.

Weitere Produktangebote IXFN120N65X2 nach Preis ab 57.09 EUR bis 74.11 EUR

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IXFN120N65X2 IXFN120N65X2 Hersteller : IXYS IXFN120N65X2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+71.5 EUR
IXFN120N65X2 IXFN120N65X2 Hersteller : IXYS media-3320610.pdf MOSFET Modules 650V/108A Ultra Junction X2-Class
auf Bestellung 300 Stücke:
Lieferzeit 234-238 Tag (e)
Anzahl Preis ohne MwSt
1+73.92 EUR
10+ 65.86 EUR
20+ 63.68 EUR
50+ 62.53 EUR
100+ 57.82 EUR
200+ 57.09 EUR
IXFN120N65X2 IXFN120N65X2 Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn120n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 108A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+74.11 EUR
10+ 66.04 EUR
100+ 57.97 EUR
IXFN120N65X2 IXFN120N65X2 Hersteller : Littelfuse fets_n-channel_ultra_junction_ixfn120n65x2_datasheet.pdf.pdf Trans MOSFET N-CH 650V 108A 4-Pin SOT-227B
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