IXFN120N65X2 IXYS
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
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Technische Details IXFN120N65X2 IXYS
Description: MOSFET N-CH 650V 108A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.
Weitere Produktangebote IXFN120N65X2 nach Preis ab 57.09 EUR bis 74.11 EUR
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IXFN120N65X2 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 108A Pulsed drain current: 240A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 24mΩ Gate charge: 240nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 220ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN120N65X2 | Hersteller : IXYS | MOSFET Modules 650V/108A Ultra Junction X2-Class |
auf Bestellung 300 Stücke: Lieferzeit 234-238 Tag (e) |
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IXFN120N65X2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 108A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 54A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V |
auf Bestellung 236 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN120N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 108A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |