![IXFN110N60P3 IXFN110N60P3](https://www.mouser.com/images/mouserelectronics/lrg/SOT_227_4_DSL.jpg)
auf Bestellung 758 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 67.27 EUR |
10+ | 60.74 EUR |
20+ | 59.03 EUR |
50+ | 57.96 EUR |
100+ | 53.57 EUR |
200+ | 52.92 EUR |
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Technische Details IXFN110N60P3 IXYS
Description: MOSFET N-CH 600V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V, Power Dissipation (Max): 1500W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFN110N60P3 nach Preis ab 53.74 EUR bis 68.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN110N60P3 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 55A, 10V Power Dissipation (Max): 1500W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
auf Bestellung 639 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN110N60P3 | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN110N60P3 | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN110N60P3 | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 90A Pulsed drain current: 275A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 56mΩ Gate charge: 254nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |