Technische Details IXFL60N80P Littelfuse
Description: MOSFET N-CH 800V 40A ISOPLUS264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V, Power Dissipation (Max): 625W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: ISOPLUS264™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V.
Weitere Produktangebote IXFL60N80P
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IXFL60N80P | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 40A Power dissipation: 625W Case: ISOPLUS264™ Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IXFL60N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 40A ISOPLUS264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: ISOPLUS264™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFL60N80P | Hersteller : IXYS |
MOSFET 42 Amps 800V 0.15 Rds |
Produkt ist nicht verfügbar |
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IXFL60N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 40A Power dissipation: 625W Case: ISOPLUS264™ Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |