IXFK80N65X2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 21.09 EUR |
| 25+ | 20.92 EUR |
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Technische Details IXFK80N65X2 IXYS
Description: MOSFET N-CH 650V 80A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V.
Weitere Produktangebote IXFK80N65X2 nach Preis ab 21.09 EUR bis 25.64 EUR
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IXFK80N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 80A Power dissipation: 890W Case: TO264P On-state resistance: 38mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 200ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK80N65X2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 80A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8245 pF @ 25 V |
auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK80N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 80A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK80N65X2 | Hersteller : IXYS |
MOSFETs 650V/80A Ultra Junction X2-Class |
Produkt ist nicht verfügbar |