Technische Details IXFK66N85X Littelfuse
Description: MOSFET N-CH 850V 66A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote IXFK66N85X
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXFK66N85X | Hersteller : Littelfuse | Trans MOSFET N-CH 850V 66A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK66N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: TO264 On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK66N85X | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 850V 66A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: TO-264AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK66N85X | Hersteller : IXYS | MOSFETs 850V Ultra Junction X-Class Pwr MOSFET |
Produkt ist nicht verfügbar |
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IXFK66N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 66A Power dissipation: 1.25kW Case: TO264 On-state resistance: 65mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |