
IXFK64N60P Littelfuse Inc.

Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 34.88 EUR |
25+ | 28.91 EUR |
100+ | 27.10 EUR |
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Technische Details IXFK64N60P Littelfuse Inc.
Description: MOSFET N-CH 600V 64A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFK64N60P nach Preis ab 24.92 EUR bis 35.09 EUR
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IXFK64N60P | Hersteller : IXYS |
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auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK64N60P Produktcode: 193667
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IXFK64N60P | Hersteller : Littelfuse |
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IXFK64N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK64N60P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 64A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 200nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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![]() |
IXFK64N60P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1040W; TO264 Case: TO264 Mounting: THT Kind of package: tube Drain-source voltage: 600V Drain current: 64A On-state resistance: 96mΩ Type of transistor: N-MOSFET Power dissipation: 1.04kW Polarisation: unipolar Gate charge: 200nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |