IXFK50N85X Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 850V 50A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-264AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 20.93 EUR |
| 25+ | 17.54 EUR |
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Technische Details IXFK50N85X Littelfuse Inc.
Description: MOSFET N-CH 850V 50A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 500mA, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-264AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 25 V.
Weitere Produktangebote IXFK50N85X nach Preis ab 19.75 EUR bis 21.08 EUR
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auf Bestellung 531 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK50N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 50A 3-Pin(3+Tab) TO-264 |
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IXFK50N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 50A 3-Pin(3+Tab) TO-264 |
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IXFK50N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO264 On-state resistance: 0.105Ω Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns Anzahl je Verpackung: 300 Stücke |
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IXFK50N85X | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 50A Power dissipation: 890W Case: TO264 On-state resistance: 0.105Ω Mounting: THT Gate charge: 152nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 218ns |
Produkt ist nicht verfügbar |