IXFK40N90P Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 900V 40A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.82 EUR |
| 25+ | 29.94 EUR |
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Technische Details IXFK40N90P Littelfuse Inc.
Description: MOSFET N-CH 900V 40A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V.
Weitere Produktangebote IXFK40N90P nach Preis ab 41.78 EUR bis 53.08 EUR
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 960W Gate charge: 230nC Polarisation: unipolar Drain current: 40A Kind of channel: enhanced Drain-source voltage: 900V Type of transistor: N-MOSFET On-state resistance: 0.23Ω Anzahl je Verpackung: 1 Stücke |
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IXFK40N90P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264 Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 960W Gate charge: 230nC Polarisation: unipolar Drain current: 40A Kind of channel: enhanced Drain-source voltage: 900V Type of transistor: N-MOSFET On-state resistance: 0.23Ω |
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