auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 50.55 EUR |
| 10+ | 50.51 EUR |
| 25+ | 45.55 EUR |
| 50+ | 41.87 EUR |
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Technische Details IXFK360N15T2 IXYS
Description: MOSFET N-CH 150V 360A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V, Power Dissipation (Max): 1670W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V.
Weitere Produktangebote IXFK360N15T2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXFK360N15T2 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK360N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK360N15T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 150V 360A 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
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IXFK360N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Drain current: 360A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain-source voltage: 150V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK360N15T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 150V 360A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V Power Dissipation (Max): 1670W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 715 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 47500 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFK360N15T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264 Case: TO264 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 1670W Polarisation: unipolar Drain current: 360A Reverse recovery time: 150ns Gate charge: 715nC Technology: GigaMOS™; HiPerFET™; TrenchT2™ Kind of channel: enhanced Gate-source voltage: ±20V On-state resistance: 4mΩ Drain-source voltage: 150V |
Produkt ist nicht verfügbar |