IXFK360N10T Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 100V 360A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V
auf Bestellung 679 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.96 EUR |
| 25+ | 17.78 EUR |
| 100+ | 16.73 EUR |
| 500+ | 15.16 EUR |
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Technische Details IXFK360N10T Littelfuse Inc.
Description: MOSFET N-CH 100V 360A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5V @ 3mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 525 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 33000 pF @ 25 V.
Weitere Produktangebote IXFK360N10T nach Preis ab 15.58 EUR bis 22.12 EUR
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IXFK360N10T | Hersteller : IXYS |
MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A |
auf Bestellung 767 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK360N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) TO-264 |
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IXFK360N10T | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 360A 3-Pin(3+Tab) TO-264 |
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IXFK360N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
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IXFK360N10T | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 360A; 1250W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 360A Power dissipation: 1.25kW Case: TO264 On-state resistance: 2.9mΩ Mounting: THT Gate charge: 525nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |