IXFK300N20X3 IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 170ns
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264
Polarisation: unipolar
Power dissipation: 1.25kW
Kind of package: tube
Gate charge: 375nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO264
Reverse recovery time: 170ns
Drain-source voltage: 200V
Drain current: 300A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 32.19 EUR |
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Technische Details IXFK300N20X3 IXYS
Description: MOSFET N-CH 200V 300A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-264, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V.
Weitere Produktangebote IXFK300N20X3 nach Preis ab 32.19 EUR bis 54.16 EUR
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IXFK300N20X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; TO264 Polarisation: unipolar Power dissipation: 1.25kW Kind of package: tube Gate charge: 375nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT Case: TO264 Reverse recovery time: 170ns Drain-source voltage: 200V Drain current: 300A On-state resistance: 4mΩ Type of transistor: N-MOSFET |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK300N20X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 300A TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: TO-264 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V |
auf Bestellung 818 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK300N20X3 | Hersteller : IXYS | MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm |
auf Bestellung 129 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK300N20X3 | Hersteller : Littelfuse | Trans MOSFET N-CH 200V 300A 3-Pin(3+Tab) TO-264 |
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