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IXFK160N30T Littelfuse Inc.
![littelfuse_discrete_mosfets_n-channel_trench_gate_ixf_160n30t_datasheet.pdf.pdf](/images/adobe-acrobat.png)
Description: MOSFET N-CH 300V 160A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V
Power Dissipation (Max): 1390W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
auf Bestellung 3425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 31.5 EUR |
25+ | 25.5 EUR |
100+ | 24 EUR |
500+ | 21.75 EUR |
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Technische Details IXFK160N30T Littelfuse Inc.
Description: MOSFET N-CH 300V 160A TO264AA, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 60A, 10V, Power Dissipation (Max): 1390W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: TO-264AA (IXFK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V.
Weitere Produktangebote IXFK160N30T nach Preis ab 31.73 EUR bis 31.75 EUR
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IXFK160N30T | Hersteller : IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 199-203 Tag (e) |
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IXFK160N30T | Hersteller : Littelfuse |
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IXFK160N30T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK160N30T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFK160N30T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFK160N30T | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 300V; 160A; 1390W; TO264 Type of transistor: N-MOSFET Technology: GigaMOS™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 160A Power dissipation: 1390W Case: TO264 Gate-source voltage: ±20V On-state resistance: 19mΩ Mounting: THT Gate charge: 376nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |