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IXFK120N65X2

IXFK120N65X2 Littelfuse Inc.


littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 120A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V
auf Bestellung 291 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+39.27 EUR
25+ 32.54 EUR
100+ 30.5 EUR
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Technische Details IXFK120N65X2 Littelfuse Inc.

Description: MOSFET N-CH 650V 120A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 10V, Power Dissipation (Max): 1250W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: TO-264AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15500 pF @ 25 V.

Weitere Produktangebote IXFK120N65X2

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IXFK120N65X2 IXFK120N65X2 Hersteller : Littelfuse fets_n-channel_ultra_junction_ixf_120n65x2_datasheet.pdf.pdf Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-264
Produkt ist nicht verfügbar
IXFK120N65X2 IXFK120N65X2 Hersteller : IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFK120N65X2 IXFK120N65X2 Hersteller : IXYS media-3323505.pdf MOSFETs MOSFET 650V/120A Ultra Junction X2
Produkt ist nicht verfügbar
IXFK120N65X2 IXFK120N65X2 Hersteller : IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 220ns
Produkt ist nicht verfügbar