IXFH60N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
30+ | 14.52 EUR |
90+ | 13.66 EUR |
300+ | 13.24 EUR |
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Technische Details IXFH60N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 60A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 4mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 25 V.
Weitere Produktangebote IXFH60N65X2 nach Preis ab 11.79 EUR bis 17.88 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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IXFH60N65X2 | Hersteller : IXYS | MOSFETs MOSFET 650V/60A Ultra Junction X2 |
auf Bestellung 1326 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH60N65X2 | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFH60N65X2 - Leistungs-MOSFET, Klasse X2, n-Kanal, 650 V, 60 A, 0.052 ohm, TO-247, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 650 Dauer-Drainstrom Id: 60 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 780 Bauform - Transistor: TO-247 Anzahl der Pins: 3 Produktpalette: HiPerFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.052 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (12-Jan-2017) |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH60N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH60N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH60N65X2 | Hersteller : Littelfuse | Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXFH60N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 120A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH60N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 120A Power dissipation: 780W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 52mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 180ns |
Produkt ist nicht verfügbar |