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IXFH56N30X3 IXYS
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Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Reverse recovery time: 115ns
Drain-source voltage: 300V
Drain current: 56A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET
Power dissipation: 320W
Polarisation: unipolar
Kind of package: tube
Gate charge: 56nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 254 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 12.13 EUR |
8+ | 8.99 EUR |
9+ | 8.51 EUR |
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Technische Details IXFH56N30X3 IXYS
Description: MOSFET N-CH 300V 56A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V, Power Dissipation (Max): 320W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-247 (IXTH), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V.
Weitere Produktangebote IXFH56N30X3 nach Preis ab 8.51 EUR bis 17.28 EUR
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IXFH56N30X3 | Hersteller : IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3 Mounting: THT Reverse recovery time: 115ns Drain-source voltage: 300V Drain current: 56A On-state resistance: 27mΩ Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 56nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO247-3 |
auf Bestellung 254 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH56N30X3 | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 28A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 1639 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH56N30X3 | Hersteller : IXYS |
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auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH56N30X3 | Hersteller : Littelfuse |
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