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ISZ520N20NM6ATMA1

ISZ520N20NM6ATMA1 Infineon Technologies

Infineon_ISZ520N20NM6_DataSheet_v02_00_EN-3398016.pdf Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 5152 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.47 EUR
10+ 2.62 EUR
100+ 1.88 EUR
250+ 1.87 EUR
500+ 1.51 EUR
1000+ 1.32 EUR
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Technische Details ISZ520N20NM6ATMA1 Infineon Technologies

Description: TRENCH >=100V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc), Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V, Power Dissipation (Max): 2.5W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 31µA, Supplier Device Package: PG-TSDSON-8-34, Drive Voltage (Max Rds On, Min Rds On): 10V, 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V.

Weitere Produktangebote ISZ520N20NM6ATMA1 nach Preis ab 1.23 EUR bis 4.05 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
auf Bestellung 4974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+4.05 EUR
10+ 2.61 EUR
100+ 1.79 EUR
500+ 1.44 EUR
1000+ 1.33 EUR
2000+ 1.23 EUR
Mindestbestellmenge: 5
ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Hersteller : Infineon Technologies infineon-isz520n20nm6-datasheet-v02_00-en.pdf Trans MOSFET N-CH 200V 4.5A T/R
Produkt ist nicht verfügbar
ISZ520N20NM6ATMA1 ISZ520N20NM6ATMA1 Hersteller : Infineon Technologies Infineon-ISZ520N20NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d3286fe540f2f Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 47.8mOhm @ 15A, 15V
Power Dissipation (Max): 2.5W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 31µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 100 V
Produkt ist nicht verfügbar