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ISP75DP06LMXTSA1

ISP75DP06LMXTSA1 Infineon Technologies

Infineon-ISP75DP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730ea4a739d Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+0.39 EUR
Mindestbestellmenge: 1000
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Technische Details ISP75DP06LMXTSA1 Infineon Technologies

Description: MOSFET P-CH 60V 1.1A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V, Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 77µA, Supplier Device Package: PG-SOT223-4, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V.

Weitere Produktangebote ISP75DP06LMXTSA1 nach Preis ab 0.31 EUR bis 1.39 EUR

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Preis ohne MwSt
ISP75DP06LMXTSA1 ISP75DP06LMXTSA1 Hersteller : Infineon Technologies Infineon_ISP75DP06LM_DS_v02_00_EN-1578806.pdf MOSFETs Y
auf Bestellung 12524 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.98 EUR
10+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.36 EUR
2000+ 0.35 EUR
10000+ 0.31 EUR
Mindestbestellmenge: 3
ISP75DP06LMXTSA1 ISP75DP06LMXTSA1 Hersteller : Infineon Technologies Infineon-ISP75DP06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a0730ea4a739d Description: MOSFET P-CH 60V 1.1A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 30 V
auf Bestellung 1443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.39 EUR
21+ 0.87 EUR
100+ 0.57 EUR
500+ 0.43 EUR
Mindestbestellmenge: 13
ISP75DP06LMXTSA1 ISP75DP06LMXTSA1 Hersteller : Infineon Technologies infineon-isp75dp06lm-ds-v02_00-en.pdf Trans MOSFET P-CH 60V 1A T/R
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