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ISO5852SDW TEXAS INSTRUMENTS
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Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A
Protection: undervoltage UVP
Operating temperature: -40...125°C
Insulation voltage: 5.7kV
Input voltage: 2.25...5.5V
Integrated circuit features: galvanically isolated
Kind of package: tube
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Topology: IGBT half-bridge; MOSFET half-bridge
Supply voltage: 15...30V DC
Output current: -5...2.5A
Type of integrated circuit: driver
Impulse rise time: 35ns
Pulse fall time: 37ns
Number of channels: 2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 120 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.88 EUR |
11+ | 6.68 EUR |
40+ | 6.39 EUR |
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Technische Details ISO5852SDW TEXAS INSTRUMENTS
Category: MOSFET/IGBT drivers, Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A, Protection: undervoltage UVP, Operating temperature: -40...125°C, Insulation voltage: 5.7kV, Input voltage: 2.25...5.5V, Integrated circuit features: galvanically isolated, Kind of package: tube, Mounting: SMD, Kind of integrated circuit: gate driver; high-/low-side, Case: SO16-W, Topology: IGBT half-bridge; MOSFET half-bridge, Supply voltage: 15...30V DC, Output current: -5...2.5A, Type of integrated circuit: driver, Impulse rise time: 35ns, Pulse fall time: 37ns, Number of channels: 2, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote ISO5852SDW nach Preis ab 6.39 EUR bis 11.35 EUR
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ISO5852SDW | Hersteller : TEXAS INSTRUMENTS |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO16-W; -5÷2.5A Protection: undervoltage UVP Operating temperature: -40...125°C Insulation voltage: 5.7kV Input voltage: 2.25...5.5V Integrated circuit features: galvanically isolated Kind of package: tube Mounting: SMD Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Topology: IGBT half-bridge; MOSFET half-bridge Supply voltage: 15...30V DC Output current: -5...2.5A Type of integrated circuit: driver Impulse rise time: 35ns Pulse fall time: 37ns Number of channels: 2 |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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ISO5852SDW | Hersteller : Texas Instruments |
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auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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ISO5852SDW | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 2.7A, 5.5A Technology: Capacitive Coupling Current - Output High, Low: 1.5A, 3.4A Voltage - Isolation: 5700Vrms Approval Agency: CQC, CSA, UR, VDE Supplier Device Package: 16-SOIC Rise / Fall Time (Typ): 18ns, 20ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 110ns, 110ns Number of Channels: 1 Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 1787 Stücke: Lieferzeit 10-14 Tag (e) |
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ISO5852SDW | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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ISO5852SDW | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |