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IS66WVC4M16EALL-7010BLI-TR ISSI


66-67wvc4m16eall.pdf Hersteller: ISSI
64Mb Low Voltage, Ultra Low Power Pseudo CMOS Static RAM
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Technische Details IS66WVC4M16EALL-7010BLI-TR ISSI

Description: IC PSRAM 64MBIT PARALLEL 54VFBGA, Packaging: Tape & Reel (TR), Package / Case: 54-VFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.95V, Technology: PSRAM (Pseudo SRAM), Memory Format: PSRAM, Supplier Device Package: 54-VFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 70ns, Memory Interface: Parallel, Access Time: 70 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.

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IS66WVC4M16EALL-7010BLI-TR Hersteller : ISSI 66-67wvc4m16eall.pdf PSRAM Async Single Port 64M-bit 4M x 16 70ns 54-Pin VFBGA T/R
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IS66WVC4M16EALL-7010BLI-TR Hersteller : ISSI IS66WVC4M16ECLL-7010BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
Anzahl je Verpackung: 2500 Stücke
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IS66WVC4M16EALL-7010BLI-TR IS66WVC4M16EALL-7010BLI-TR Hersteller : ISSI, Integrated Silicon Solution Inc 66-67WVC4M16EALL.pdf Description: IC PSRAM 64MBIT PARALLEL 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Memory Format: PSRAM
Supplier Device Package: 54-VFBGA (6x8)
Part Status: Active
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IS66WVC4M16EALL-7010BLI-TR IS66WVC4M16EALL-7010BLI-TR Hersteller : ISSI 66_67WVC4M16EALL-845141.pdf SRAM 64Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5,4M x 16,70ns,1.7v~1.95v,54 Ball BGA (6x8 mm), RoHS
Produkt ist nicht verfügbar
IS66WVC4M16EALL-7010BLI-TR Hersteller : ISSI IS66WVC4M16ECLL-7010BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 1.7÷1.95V; 70ns; VFBGA54
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 64Mb SRAM
Memory organisation: 4Mx16bit
Access time: 70ns
Case: VFBGA54
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Operating voltage: 1.7...1.95V
Produkt ist nicht verfügbar