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1+ | 8.08 EUR |
10+ | 7.36 EUR |
100+ | 5.86 EUR |
270+ | 5.84 EUR |
540+ | 5.76 EUR |
1080+ | 5.7 EUR |
2565+ | 5.63 EUR |
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Technische Details IS64WV6416EEBLL-10CTLA3 ISSI
Description: IC SRAM 1MBIT PARALLEL 44TSOP II, Packaging: Tube, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 64K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64WV6416EEBLL-10CTLA3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS64WV6416EEBLL-10CTLA3 | Hersteller : ISSI | SRAM Chip Async Single 2.5V/3.3V 1M-bit 64K x 16 10ns Automotive 44-Pin TSOP-II |
Produkt ist nicht verfügbar |
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IS64WV6416EEBLL-10CTLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V Anzahl je Verpackung: 135 Stücke |
Produkt ist nicht verfügbar |
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IS64WV6416EEBLL-10CTLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 1MBIT PARALLEL 44TSOP II Packaging: Tube Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS64WV6416EEBLL-10CTLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |