auf Bestellung 101 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 25.71 EUR |
| 10+ | 23.81 EUR |
| 25+ | 23.5 EUR |
| 96+ | 20.31 EUR |
| 288+ | 19.89 EUR |
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Technische Details IS64WV51216EEBLL-10CT2LA3 ISSI
Description: 8Mb,High-Speed/Low Power,Async w, Packaging: Tray, Package / Case: 48-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 8Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TSOP I, Grade: Automotive, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 512K x 16, Qualification: AEC-Q100.
Weitere Produktangebote IS64WV51216EEBLL-10CT2LA3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS64WV51216EEBLL-10CT2LA3 | Hersteller : ISSI |
 SRAM Chip Async Dual 2.5V/3.3V 16M-bit 512K x 16 10ns Automotive AEC-Q100 48-Pin TSOP-I |
Produkt ist nicht verfügbar |
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| IS64WV51216EEBLL-10CT2LA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: 8Mb,High-Speed/Low Power,Async w Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Grade: Automotive Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 512K x 16 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |