IS64WV25616EDBLL-10BLA3 ISSI
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Technische Details IS64WV25616EDBLL-10BLA3 ISSI
Description: IC SRAM 4MBIT PARALLEL 48TFBGA, Packaging: Tray, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64WV25616EDBLL-10BLA3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS64WV25616EDBLL-10BLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V Anzahl je Verpackung: 480 Stücke |
Produkt ist nicht verfügbar |
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IS64WV25616EDBLL-10BLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 48TFBGA Packaging: Tray Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS64WV25616EDBLL-10BLA3 | Hersteller : ISSI | SRAM 4Mb 3.6v 10ns 512Kx16 LPAsync SRAM |
Produkt ist nicht verfügbar |
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IS64WV25616EDBLL-10BLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |