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Technische Details IS64LPS12832A-200TQLA3 ISSI
Description: IC SRAM 4MBIT PARALLEL 100TQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 128K x 32, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS64LPS12832A-200TQLA3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS64LPS12832A-200TQLA3 | Hersteller : ISSI |
 SRAM Chip Sync Quad 3.3V 4M-bit 128K x 32 3.1ns Automotive 100-Pin TQFP |
Produkt ist nicht verfügbar |
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| IS64LPS12832A-200TQLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Kind of package: in-tray; tube Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 Anzahl je Verpackung: 72 Stücke |
Produkt ist nicht verfügbar |
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IS64LPS12832A-200TQLA3 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 4MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 128K x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| IS64LPS12832A-200TQLA3 | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Kind of package: in-tray; tube Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx32bit Access time: 3.1ns Kind of interface: parallel Memory: 4Mb SRAM Mounting: SMD Operating temperature: -40...125°C Case: QFP100 |
Produkt ist nicht verfügbar |