Technische Details IS61WV5128BLL-10KLI-TR ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 4Mb SRAM, Memory organisation: 512kx8bit, Access time: 10ns, Case: SOJ36, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Operating voltage: 2.4...3.6V, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote IS61WV5128BLL-10KLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61WV5128BLL-10KLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IS61WV5128BLL-10KLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC SRAM 4M PARALLEL 36SOJ |
Produkt ist nicht verfügbar |
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IS61WV5128BLL-10KLI-TR | Hersteller : ISSI | SRAM 4Mb,High-Speed/Low Power,Async,512K x 8,8ns/3.3v,or 10ns/2.4v-3.6v,36 Pin SOJ (400mil), RoHS |
Produkt ist nicht verfügbar |
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IS61WV5128BLL-10KLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 2.4÷3.6V; 10ns; SOJ36 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |