IS61WV25616FALL-10TLI ISSI
Hersteller: ISSISRAM 4Mb,High-Speed/Low Power,Async,256K x 16,1.65V-2.2V, 10ns, 44 Pin TSOP II, RoHS
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.62 EUR |
| 10+ | 6 EUR |
| 100+ | 4.56 EUR |
| 270+ | 4.54 EUR |
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Technische Details IS61WV25616FALL-10TLI ISSI
Description: 4Mb,High-Speed/Low Power,Async,2, Packaging: Bulk, Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 2.2V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16.
Weitere Produktangebote IS61WV25616FALL-10TLI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IS61WV25616FALL-10TLI | Hersteller : ISSI |
SRAM Chip Async Single 1.8V 4M-bit 256K x 16 10ns 44-Pin TSOP-II |
Produkt ist nicht verfügbar |
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| IS61WV25616FALL-10TLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: 4Mb,High-Speed/Low Power,Async,2 Packaging: Bulk Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 |
Produkt ist nicht verfügbar |