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IS61WV25616EFBLL-10TLI-TR

IS61WV25616EFBLL-10TLI-TR ISSI


61-64wv25616efall_bll.pdf Hersteller: ISSI
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
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Technische Details IS61WV25616EFBLL-10TLI-TR ISSI

Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16.

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IS61WV25616EFBLL-10TLI-TR IS61WV25616EFBLL-10TLI-TR Hersteller : ISSI 61-64wv25616efall_bll.pdf SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44-Pin TSOP-II
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IS61WV25616EFBLL-10TLI-TR Hersteller : ISSI, Integrated Silicon Solution Inc 61-64WV25616EFALL_BLL.pdf Description: 4Mb,High-Speed/Low Power,Async w
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
Produkt ist nicht verfügbar
IS61WV25616EFBLL-10TLI-TR IS61WV25616EFBLL-10TLI-TR Hersteller : ISSI 61_64WV25616EFALL_BLL-1620710.pdf SRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,44 Pin TSOP II, RoHS
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