IS61WV25616EFBLL-10BLI ISSI
Hersteller: ISSISRAM 4Mb,High-Speed/Low Power,Async with ECC,256K x 16,8ns/3.3v +/-10%,or 10ns/2.4v-3.6v,48 Ball mBGA (6x8 mm), RoHS
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.92 EUR |
| 250+ | 3.82 EUR |
| 480+ | 3.8 EUR |
| 960+ | 3.54 EUR |
| 2880+ | 3.43 EUR |
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Technische Details IS61WV25616EFBLL-10BLI ISSI
Description: 4Mb,High-Speed/Low Power,Async w, Packaging: Bulk, Package / Case: 48-TFBGA, Mounting Type: Surface Mount, Memory Size: 4Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.4V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Part Status: Active, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 256K x 16, DigiKey Programmable: Not Verified.
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Description: 4Mb,High-Speed/Low Power,Async w Packaging: Bulk Package / Case: 48-TFBGA Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.4V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |