IS61WV12816DBLL-10TLI-TR ISSI
Hersteller: ISSI
SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4V-3.6V, 44 Pin TSOP II, RoHS
SRAM 2Mb,High-Speed,Async,128K x 16,8ns/3.3v, or 10ns/2.4V-3.6V, 44 Pin TSOP II, RoHS
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.32 EUR |
10+ | 7.6 EUR |
25+ | 7.46 EUR |
100+ | 6.65 EUR |
250+ | 6.64 EUR |
500+ | 6.2 EUR |
1000+ | 5.95 EUR |
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Technische Details IS61WV12816DBLL-10TLI-TR ISSI
Description: IC SRAM 2MBIT PARALLEL 44TSOP II, Packaging: Tape & Reel (TR), Package / Case: 44-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 2Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 128K x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61WV12816DBLL-10TLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IS61WV12816DBLL-10TLI-TR | Hersteller : ISSI | SRAM Chip Async Single 2.5V/3.3V 2M-bit 128K x 16 10ns 44-Pin TSOP-II T/R |
Produkt ist nicht verfügbar |
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IS61WV12816DBLL-10TLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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IS61WV12816DBLL-10TLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 2MBIT PARALLEL 44TSOP II Packaging: Tape & Reel (TR) Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 128K x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS61WV12816DBLL-10TLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 128kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
Produkt ist nicht verfügbar |