Technische Details IS61WV102416ALL-20MLI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory: 16Mb SRAM, Memory organisation: 1Mx16bit, Access time: 20ns, Case: TFBGA48, Kind of interface: parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Operating voltage: 1.65...2.2V, Anzahl je Verpackung: 210 Stücke.
Weitere Produktangebote IS61WV102416ALL-20MLI
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61WV102416ALL-20MLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 20ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V Anzahl je Verpackung: 210 Stücke |
Produkt ist nicht verfügbar |
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IS61WV102416ALL-20MLI | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC SRAM 16MBIT PAR 48MINIBGA |
Produkt ist nicht verfügbar |
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IS61WV102416ALL-20MLI | Hersteller : ISSI | SRAM 16Mb,High-Speed,Async,1Mbx16,20ns/1.65v-2.2v, 48 Ball mBGA (9x11 mm), RoHS |
Produkt ist nicht verfügbar |
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IS61WV102416ALL-20MLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 1.65÷2.2V; 20ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Access time: 20ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 1.65...2.2V |
Produkt ist nicht verfügbar |