Technische Details IS61VPS51236B-250B3LI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165, Type of integrated circuit: SRAM memory, Case: TFBGA165, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: in-tray; tube, Kind of interface: parallel, Memory: 18Mb SRAM, Operating voltage: 2.5V, Kind of memory: SRAM, Memory organisation: 512kx36bit, Access time: 2.6ns, Anzahl je Verpackung: 144 Stücke.
Weitere Produktangebote IS61VPS51236B-250B3LI
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| IS61VPS51236B-250B3LI | Hersteller : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 2.6ns Anzahl je Verpackung: 144 Stücke |
Produkt ist nicht verfügbar |
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IS61VPS51236B-250B3LI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 18MB 250MHZ 2.5V 165BGA |
Produkt ist nicht verfügbar |
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IS61VPS51236B-250B3LI | Hersteller : ISSI |
SRAM 18Mb,Pipeline,Sync,512K x 36,250MHz,2.5V I/O,165 Ball BGA, RoHS |
Produkt ist nicht verfügbar |
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| IS61VPS51236B-250B3LI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 2.5V; 2.6ns; TFBGA165 Type of integrated circuit: SRAM memory Case: TFBGA165 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Memory: 18Mb SRAM Operating voltage: 2.5V Kind of memory: SRAM Memory organisation: 512kx36bit Access time: 2.6ns |
Produkt ist nicht verfügbar |