Technische Details IS61NLP51218B-200TQLI ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel, Mounting: SMD, Operating temperature: -40...85°C, Memory: 9Mb SRAM, Kind of package: in-tray; tube, Kind of interface: parallel, Case: QFP100, Operating voltage: 3.3V, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 512kx18bit, Access time: 3.1ns, Anzahl je Verpackung: 72 Stücke.
Weitere Produktangebote IS61NLP51218B-200TQLI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS61NLP51218B-200TQLI | Hersteller : ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Anzahl je Verpackung: 72 Stücke |
Produkt ist nicht verfügbar |
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%20Renders/706;-100LQFP-1.6-14x20;-;-100.jpg "IS61NLP51218B-200TQLI") |
IS61NLP51218B-200TQLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 9MBIT PARALLEL 100LQFP |
Produkt ist nicht verfügbar |
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IS61NLP51218B-200TQLI | Hersteller : ISSI |
SRAM 8Mb,"No-Wait"/Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, RoHS |
Produkt ist nicht verfügbar |
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| IS61NLP51218B-200TQLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns |
Produkt ist nicht verfügbar |