Technische Details IS61NLP102418B-200B3L ISSI
Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel, Mounting: SMD, Operating temperature: 0...70°C, Memory: 18Mb SRAM, Kind of package: in-tray; tube, Kind of interface: parallel, Case: TFBGA165, Operating voltage: 3.3V, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 1Mx18bit, Access time: 3ns, Anzahl je Verpackung: 144 Stücke.
Weitere Produktangebote IS61NLP102418B-200B3L
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61NLP102418B-200B3L | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Mounting: SMD Operating temperature: 0...70°C Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns Anzahl je Verpackung: 144 Stücke |
Produkt ist nicht verfügbar |
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IS61NLP102418B-200B3L | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC SRAM 18M PARALLEL 165TFBGA |
Produkt ist nicht verfügbar |
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IS61NLP102418B-200B3L | Hersteller : ISSI | SRAM 18Mb,"No-Wait"/Pipeline,Sync,1Mb x 18,200Mhz,3.3v/2.5v - I/O,165 Ball BGA, RoHS |
Produkt ist nicht verfügbar |
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IS61NLP102418B-200B3L | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 1Mx18bit; 3.3V; 3ns; TFBGA165; parallel Mounting: SMD Operating temperature: 0...70°C Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: TFBGA165 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 1Mx18bit Access time: 3ns |
Produkt ist nicht verfügbar |