IS61LPS51218B-200TQLI-TR ISSI
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Technische Details IS61LPS51218B-200TQLI-TR ISSI
Description: IC SRAM 9MBIT PARALLEL 100LQFP, Packaging: Tape & Reel (TR), Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 9Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 512K x 18, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61LPS51218B-200TQLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61LPS51218B-200TQLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IS61LPS51218B-200TQLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 9MBIT PARALLEL 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 512K x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS61LPS51218B-200TQLI-TR | Hersteller : ISSI | SRAM 8Mb,Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, 3CE, RoHS |
Produkt ist nicht verfügbar |
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IS61LPS51218B-200TQLI-TR | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Mounting: SMD Operating temperature: -40...85°C Memory: 9Mb SRAM Kind of package: reel; tape Kind of interface: parallel Case: QFP100 Operating voltage: 3.3V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 512kx18bit Access time: 3.1ns |
Produkt ist nicht verfügbar |