Technische Details IS61LPS51218A-200TQLI ISSI
Description: IC SRAM 9MBIT PARALLEL 100TQFP, Packaging: Tray, Package / Case: 100-LQFP, Mounting Type: Surface Mount, Memory Size: 9Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3.135V ~ 3.465V, Technology: SRAM - Synchronous, SDR, Clock Frequency: 200 MHz, Memory Format: SRAM, Supplier Device Package: 100-LQFP (14x20), Memory Interface: Parallel, Access Time: 3.1 ns, Memory Organization: 512K x 18, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS61LPS51218A-200TQLI
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS61LPS51218A-200TQLI | Hersteller : ISSI | SRAM Chip Sync Dual 3.3V 9M-bit 512K x 18 3.1ns 100-Pin TQFP |
Produkt ist nicht verfügbar |
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IS61LPS51218A-200TQLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 512kx18bit Access time: 3.1ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V Anzahl je Verpackung: 72 Stücke |
Produkt ist nicht verfügbar |
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IS61LPS51218A-200TQLI | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 9MBIT PARALLEL 100TQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 9Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3.135V ~ 3.465V Technology: SRAM - Synchronous, SDR Clock Frequency: 200 MHz Memory Format: SRAM Supplier Device Package: 100-LQFP (14x20) Memory Interface: Parallel Access Time: 3.1 ns Memory Organization: 512K x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS61LPS51218A-200TQLI | Hersteller : ISSI | SRAM 8Mb,Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, 3CE, RoHS |
Produkt ist nicht verfügbar |
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IS61LPS51218A-200TQLI | Hersteller : ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 9Mb SRAM Memory organisation: 512kx18bit Access time: 3.1ns Case: QFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Operating voltage: 3.3V |
Produkt ist nicht verfügbar |