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IS61LF51218B-7.5TQLI-TR ISSI


IS61LF25636B-7.5TQLI.pdf Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: QFP100
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Anzahl je Verpackung: 800 Stücke
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Technische Details IS61LF51218B-7.5TQLI-TR ISSI

Category: Parallel SRAM memories - integ. circ., Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Case: QFP100, Kind of interface: parallel, Memory: 9Mb SRAM, Operating voltage: 3.3V, Type of integrated circuit: SRAM memory, Kind of memory: SRAM, Memory organisation: 512kx18bit, Access time: 7.5ns, Anzahl je Verpackung: 800 Stücke.

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IS61LF51218B-7.5TQLI-TR IS61LF51218B-7.5TQLI-TR Hersteller : ISSI 61VF_LF25636B_51218B-845180.pdf SRAM 8Mb,Flow-Through,Sync,512K x 18,7.5ns,3.3v I/O,100 Pin TQFP, 3CE, RoHS
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IS61LF51218B-7.5TQLI-TR Hersteller : ISSI IS61LF25636B-7.5TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 9MbSRAM; 512kx18bit; 3.3V; 7.5ns; QFP100; parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: QFP100
Kind of interface: parallel
Memory: 9Mb SRAM
Operating voltage: 3.3V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 512kx18bit
Access time: 7.5ns
Produkt ist nicht verfügbar