Technische Details IS46R16160F-5TLA1-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory: 256Mb DRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 200MHz, Access time: 5ns, Case: TSOP66 II, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 2.5V DC, Anzahl je Verpackung: 1500 Stücke.
Weitere Produktangebote IS46R16160F-5TLA1-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IS46R16160F-5TLA1-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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IS46R16160F-5TLA1-TR | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC DDR1 256MB 2.5V 200MHZ 66TSOP |
Produkt ist nicht verfügbar |
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IS46R16160F-5TLA1-TR | Hersteller : ISSI | DRAM Automotive (-40 to +85C), 256M, 2.5V, DDR1, 64Mx8, 200MHz, 66 pin TSOP-II RoHS, T&R |
Produkt ist nicht verfügbar |
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IS46R16160F-5TLA1-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TSOP66 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |