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1080+ | 4.51 EUR |
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Technische Details IS45S16400J-6TLA1 ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 64Mb DRAM, Memory organisation: 1Mx16bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TSOP54 II, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 3...3.6V DC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IS45S16400J-6TLA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt |
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IS45S16400J-6TLA1 | Hersteller : ISSI | DRAM Chip SDRAM 64Mbit 4Mx16 3.3V Automotive AEC-Q100 54-Pin TSOP-II |
Produkt ist nicht verfügbar |
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IS45S16400J-6TLA1 | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IS45S16400J-6TLA1 | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PAR 54TSOP II Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 4M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS45S16400J-6TLA1 | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 64Mb DRAM Memory organisation: 1Mx16bitx4 Clock frequency: 166MHz Access time: 6ns Case: TSOP54 II Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |