Technische Details IS43R16160F-5BL ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory: 256Mb DRAM, Memory organisation: 4Mx16bitx4, Clock frequency: 200MHz, Access time: 5ns, Case: TFBGA60, Mounting: SMD, Operating temperature: 0...70°C, Kind of interface: parallel, Kind of package: in-tray; tube, Supply voltage: 2.5V DC, Anzahl je Verpackung: 190 Stücke.
Weitere Produktangebote IS43R16160F-5BL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IS43R16160F-5BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC Anzahl je Verpackung: 190 Stücke |
Produkt ist nicht verfügbar |
||
IS43R16160F-5BL | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC DDR 256MB 200MHZ 2.5V 60BGA |
Produkt ist nicht verfügbar |
||
IS43R16160F-5BL | Hersteller : ISSI | DRAM 256M, 2.5V, DDR, 16Mx16, 200MHz, 60 ball BGA (8mmx13mm) RoHS |
Produkt ist nicht verfügbar |
||
IS43R16160F-5BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 200MHz; 5ns; TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory: 256Mb DRAM Memory organisation: 4Mx16bitx4 Clock frequency: 200MHz Access time: 5ns Case: TFBGA60 Mounting: SMD Operating temperature: 0...70°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 2.5V DC |
Produkt ist nicht verfügbar |