IS43LR32160C-6BLI-TR ISSI
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Anzahl je Verpackung: 2500 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Clock frequency: 166MHz
Access time: 6ns
Case: TFBGA90
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Kind of package: reel; tape
Supply voltage: 1.7...1.95V DC
Anzahl je Verpackung: 2500 Stücke
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Technische Details IS43LR32160C-6BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90, Type of integrated circuit: DRAM memory, Kind of memory: LPDDR; SDRAM, Memory: 512Mb DRAM, Memory organisation: 4Mx32bitx4, Clock frequency: 166MHz, Access time: 6ns, Case: TFBGA90, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 1.7...1.95V DC, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote IS43LR32160C-6BLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS43LR32160C-6BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 512MBIT PARALLEL 90TFBGA |
Produkt ist nicht verfügbar |
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IS43LR32160C-6BLI-TR | Hersteller : ISSI | DRAM 512M, 1.8V, 166Mhz Mobile DDR |
Produkt ist nicht verfügbar |
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IS43LR32160C-6BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 166MHz; 6ns; TFBGA90 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Clock frequency: 166MHz Access time: 6ns Case: TFBGA90 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 1.7...1.95V DC |
Produkt ist nicht verfügbar |