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IS43LR16400C-6BLI ISSI


117650984713447443-46lr16400c.pdf Hersteller: ISSI
DRAM Chip DDR SDRAM 64Mbit 4Mx16 1.8V 60-Pin TFBGA
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Technische Details IS43LR16400C-6BLI ISSI

Description: IC DRAM 64MBIT PARALLEL 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 64Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 4M x 16, DigiKey Programmable: Not Verified.

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IS43LR16400C-6BLI Hersteller : ISSI IS43LR16400C-6BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Access time: 6ns
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar
IS43LR16400C-6BLI IS43LR16400C-6BLI Hersteller : ISSI, Integrated Silicon Solution Inc 43-46LR16400C.pdf Description: IC DRAM 64MBIT PARALLEL 60TFBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 4M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
IS43LR16400C-6BLI Hersteller : ISSI 43-46LR16400C-837961.pdf DRAM 64M, 1.8V, M-DDR 4Mx16, 166Mhz, RoHS
Produkt ist nicht verfügbar
IS43LR16400C-6BLI Hersteller : ISSI IS43LR16400C-6BLI.pdf Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 1Mx16bitx4; 166MHz; 6ns; TFBGA60
Supply voltage: 1.7...1.95V DC
Mounting: SMD
Operating temperature: -40...85°C
Clock frequency: 166MHz
Kind of package: in-tray; tube
Kind of interface: parallel
Memory: 64Mb DRAM
Case: TFBGA60
Type of integrated circuit: DRAM memory
Kind of memory: LPDDR; SDRAM
Memory organisation: 1Mx16bitx4
Access time: 6ns
Produkt ist nicht verfügbar