Technische Details IS43LR16320C-6BLI-TR ISSI
Description: IC DRAM 512MBIT PAR 60TFBGA, Packaging: Tape & Reel (TR), Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43LR16320C-6BLI-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS43LR16320C-6BLI-TR | Hersteller : ISSI |
 Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Clock frequency: 166MHz Kind of package: reel; tape Kind of interface: parallel Memory: 512Mb DRAM Case: TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IS43LR16320C-6BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS43LR16320C-6BLI-TR | Hersteller : ISSI |
DRAM 512M, 1.8V, Mobile DDR, 32Mx16, 166Mhz, 60 ball BGA (8mmx10mm) RoHS, IT, T&R |
Produkt ist nicht verfügbar |
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| IS43LR16320C-6BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 166MHz; 6ns; TFBGA60 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: -40...85°C Clock frequency: 166MHz Kind of package: reel; tape Kind of interface: parallel Memory: 512Mb DRAM Case: TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 8Mx16bitx4 Access time: 6ns |
Produkt ist nicht verfügbar |