Technische Details IS43LR16160G-6BL ISSI
Description: IC DRAM 256MBIT PAR 60TFBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 1.7V ~ 1.95V, Technology: SDRAM - Mobile LPDDR, Clock Frequency: 166 MHz, Memory Format: DRAM, Supplier Device Package: 60-TFBGA (8x10), Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 5.5 ns, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43LR16160G-6BL
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IS43LR16160G-6BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: 0...70°C Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Case: TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
||
IS43LR16160G-6BL | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tray Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
||
IS43LR16160G-6BL | Hersteller : ISSI | DRAM 256M, 1.8V, 166Mhz Mobile DDR SDRAM |
Produkt ist nicht verfügbar |
||
IS43LR16160G-6BL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 256MbDRAM; 4Mx16bitx4; 166MHz; 6ns; TFBGA60 Supply voltage: 1.7...1.95V DC Mounting: SMD Operating temperature: 0...70°C Clock frequency: 166MHz Kind of package: in-tray; tube Kind of interface: parallel Memory: 256Mb DRAM Case: TFBGA60 Type of integrated circuit: DRAM memory Kind of memory: LPDDR; SDRAM Memory organisation: 4Mx16bitx4 Access time: 6ns |
Produkt ist nicht verfügbar |