IS43LD32160A-25BLI-TR ISSI
Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
Anzahl je Verpackung: 2000 Stücke
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Type of integrated circuit: DRAM memory
Case: TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Kind of interface: parallel
Memory organisation: 4Mx32bitx4
Kind of memory: LPDDR2; SDRAM
Access time: 18ns
Anzahl je Verpackung: 2000 Stücke
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Technische Details IS43LD32160A-25BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134, Type of integrated circuit: DRAM memory, Case: TFBGA134, Mounting: SMD, Operating temperature: -40...85°C, Kind of package: reel; tape, Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC, Clock frequency: 400MHz, Memory: 512Mb DRAM, Kind of interface: parallel, Memory organisation: 4Mx32bitx4, Kind of memory: LPDDR2; SDRAM, Access time: 18ns, Anzahl je Verpackung: 2000 Stücke.
Weitere Produktangebote IS43LD32160A-25BLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS43LD32160A-25BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc | Description: IC DRAM 512M PARALLEL 400MHZ |
Produkt ist nicht verfügbar |
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IS43LD32160A-25BLI-TR | Hersteller : ISSI | DRAM 512M, 1.2/1.8V, LPDDR2, 16Mx32, 400MHz, 134 ball BGA (10mmx11.5mm) RoHS, IT, T&R |
Produkt ist nicht verfügbar |
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IS43LD32160A-25BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Kind of interface: parallel Memory organisation: 4Mx32bitx4 Kind of memory: LPDDR2; SDRAM Access time: 18ns |
Produkt ist nicht verfügbar |