IS43LD16640C-25BLI-TR ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 134TFBGA
Packaging: Cut Tape (CT)
Package / Case: 134-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2-S4
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-TFBGA (10x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 134TFBGA
Packaging: Cut Tape (CT)
Package / Case: 134-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.95V
Technology: SDRAM - Mobile LPDDR2-S4
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 134-TFBGA (10x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 2401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.67 EUR |
10+ | 15.43 EUR |
25+ | 15.08 EUR |
50+ | 15 EUR |
100+ | 13.21 EUR |
250+ | 12.55 EUR |
500+ | 12.43 EUR |
1000+ | 12.01 EUR |
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Technische Details IS43LD16640C-25BLI-TR ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 134TFBGA, Packaging: Tape & Reel (TR), Package / Case: 134-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TC), Voltage - Supply: 1.14V ~ 1.95V, Technology: SDRAM - Mobile LPDDR2-S4, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 134-TFBGA (10x11.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43LD16640C-25BLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS43LD16640C-25BLI-TR | Hersteller : ISSI | DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 64Mx16 1.2V/1.8V 134-Pin TFBGA T/R |
Produkt ist nicht verfügbar |
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IS43LD16640C-25BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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IS43LD16640C-25BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 134TFBGA Packaging: Tape & Reel (TR) Package / Case: 134-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TC) Voltage - Supply: 1.14V ~ 1.95V Technology: SDRAM - Mobile LPDDR2-S4 Clock Frequency: 400 MHz Memory Format: DRAM Supplier Device Package: 134-TFBGA (10x11.5) Part Status: Active Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Memory Organization: 64M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS43LD16640C-25BLI-TR | Hersteller : ISSI | DRAM 1G 64Mx16 400MHz LPDDR2 1.2/1.8V |
Produkt ist nicht verfügbar |
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IS43LD16640C-25BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 1GbDRAM; 8Mx16bitx8; 400MHz; 18ns; TFBGA134 Type of integrated circuit: DRAM memory Case: TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 1Gb DRAM Kind of interface: parallel Memory organisation: 8Mx16bitx8 Kind of memory: LPDDR2; SDRAM Access time: 18ns |
Produkt ist nicht verfügbar |