IS43DR86400E-25DBL ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 60TWBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 60TWBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.6 EUR |
10+ | 5.08 EUR |
25+ | 4.97 EUR |
40+ | 4.94 EUR |
80+ | 4.43 EUR |
242+ | 4.41 EUR |
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Technische Details IS43DR86400E-25DBL ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 512MBIT PAR 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 85°C (TC), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 400 ps, Memory Organization: 64M x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43DR86400E-25DBL nach Preis ab 4.07 EUR bis 5.63 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS43DR86400E-25DBL | Hersteller : ISSI | DRAM 512M 64Mx8 400MHz DDR2 1.8V |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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IS43DR86400E-25DBL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube Anzahl je Verpackung: 242 Stücke |
Produkt ist nicht verfügbar |
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IS43DR86400E-25DBL | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Mounting: SMD Operating temperature: 0...85°C Kind of interface: parallel Memory: 512Mb DRAM Case: TWBGA60 Supply voltage: 1.7...1.9V DC Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 16Mx8bitx4 Access time: 12.5ns Clock frequency: 400MHz Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |