IS43DR82560C-25DBLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution IncDescription: IC DRAM 2GBIT PARALLEL 60TWBGA
Packaging: Tray
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 400 MHz
Memory Format: DRAM
Supplier Device Package: 60-TWBGA (8x10.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 400 ps
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
auf Bestellung 1068 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 16.35 EUR |
| 10+ | 15.73 EUR |
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Technische Details IS43DR82560C-25DBLI ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 60TWBGA, Packaging: Tray, Package / Case: 60-TFBGA, Mounting Type: Surface Mount, Memory Size: 2Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 400 MHz, Memory Format: DRAM, Supplier Device Package: 60-TWBGA (8x10.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 400 ps, Memory Organization: 256M x 8, DigiKey Programmable: Not Verified.
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| IS43DR82560C-25DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel Anzahl je Verpackung: 242 Stücke |
Produkt ist nicht verfügbar |
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| IS43DR82560C-25DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 2GbDRAM; 32Mx8bitx8; 400MHz; 5ns; TWBGA60 Type of integrated circuit: DRAM memory Clock frequency: 400MHz Mounting: SMD Case: TWBGA60 Supply voltage: 1.7...1.9V DC Memory: 2Gb DRAM Operating temperature: -40...85°C Kind of package: in-tray; tube Access time: 5ns Memory organisation: 32Mx8bitx8 Kind of memory: DDR2; SDRAM Kind of interface: parallel |
Produkt ist nicht verfügbar |