IS43DR16640C-3DBLI ISSI, Integrated Silicon Solution Inc
Hersteller: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 84TWBGA
Packaging: Tray
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-TWBGA (8x12.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 84TWBGA
Packaging: Tray
Package / Case: 84-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SDRAM - DDR2
Clock Frequency: 333 MHz
Memory Format: DRAM
Supplier Device Package: 84-TWBGA (8x12.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 450 ps
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.56 EUR |
10+ | 8.72 EUR |
25+ | 8.56 EUR |
40+ | 8.49 EUR |
209+ | 7.62 EUR |
418+ | 7.59 EUR |
627+ | 7.12 EUR |
1045+ | 6.82 EUR |
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Technische Details IS43DR16640C-3DBLI ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 84TWBGA, Packaging: Tray, Package / Case: 84-TFBGA, Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.7V ~ 1.9V, Technology: SDRAM - DDR2, Clock Frequency: 333 MHz, Memory Format: DRAM, Supplier Device Package: 84-TWBGA (8x12.5), Part Status: Active, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 450 ps, Memory Organization: 64M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote IS43DR16640C-3DBLI nach Preis ab 11.39 EUR bis 12.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IS43DR16640C-3DBLI | Hersteller : ISSI | DRAM DDR2,1G,1.8V, RoHs 333MHz,64Mx16, IT |
auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
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IS43DR16640C-3DBLI | Hersteller : ISSI | DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84-Pin TW-BGA |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IS43DR16640C-3DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |
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IS43DR16640C-3DBLI | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 8Mx16bitx8; 333MHz; 15ns; TWBGA84; -40÷85°C Type of integrated circuit: DRAM memory Kind of memory: DDR2; SDRAM Memory organisation: 8Mx16bitx8 Clock frequency: 333MHz Access time: 15ns Case: TWBGA84 Memory capacity: 1Gb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: in-tray; tube Supply voltage: 1.7...1.9V DC |
Produkt ist nicht verfügbar |