Technische Details IS42S16320F-7BLI-TR ISSI
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54, Type of integrated circuit: DRAM memory, Kind of memory: SDRAM, Memory: 512Mb DRAM, Memory organisation: 8Mx16bitx4, Clock frequency: 143MHz, Access time: 7ns, Case: TWBGA54, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Kind of package: reel; tape, Supply voltage: 3...3.6V DC, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote IS42S16320F-7BLI-TR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IS42S16320F-7BLI-TR | Hersteller : ISSI | DRAM Chip SDRAM 512Mbit 32Mx16 3.3V 54-Pin T/R |
Produkt ist nicht verfügbar |
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IS42S16320F-7BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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IS42S16320F-7BLI-TR | Hersteller : ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 512MBIT PAR 54TFBGA Packaging: Tape & Reel (TR) Package / Case: 54-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 143 MHz Memory Format: DRAM Supplier Device Package: 54-TW-BGA (8x13) Memory Interface: Parallel Access Time: 5.4 ns Memory Organization: 32M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IS42S16320F-7BLI-TR | Hersteller : ISSI | DRAM 512M, 3.3V, SDRAM, 32Mx16, 143MHz, 54 ball BGA (8mmx13mm), RoHS, IT, T&R |
Produkt ist nicht verfügbar |
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IS42S16320F-7BLI-TR | Hersteller : ISSI |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 512MbDRAM; 8Mx16bitx4; 143MHz; 7ns; TWBGA54 Type of integrated circuit: DRAM memory Kind of memory: SDRAM Memory: 512Mb DRAM Memory organisation: 8Mx16bitx4 Clock frequency: 143MHz Access time: 7ns Case: TWBGA54 Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Kind of package: reel; tape Supply voltage: 3...3.6V DC |
Produkt ist nicht verfügbar |